Datasheet4U Logo Datasheet4U.com

HMN328D - Non-Volatile SRAM MODULE 256Kbit

Description

The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits.

Features

  • w Access time : 70, 85, , 120, 150 ns w High-density design : 256Kbit Design w Battery internally isolated until power is applied w Industry-standard 28-pin 32K x 8 pinout w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Industrial temperature operation PIN.

📥 Download Datasheet

Datasheet preview – HMN328D

Datasheet Details

Part number HMN328D
Manufacturer Hanbit Electronics
File Size 183.92 KB
Description Non-Volatile SRAM MODULE 256Kbit
Datasheet download datasheet HMN328D Datasheet
Additional preview pages of the HMN328D datasheet.

📁 Similar Datasheet

  • HMN10N65D - 650V GaN Enhancement-mode Power Transistor (H&M Semiconductor)
  • HMN10N65Q - 650V GaN Enhancement-mode Power Transistor (H&M Semiconductor)
  • HMN11N65D - 650V GaN Power Transistor (H&M Semiconductor)
  • HMN12816D - Non-Volatile SRAM MODULE 2Mbit (Hanbit)
  • HMN1288D - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
  • HMN1288DV - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
  • HMN1288J - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
  • HMN4013A4 - N-Channel Power MOSFET (HUAHONG)
Other Datasheets by Hanbit Electronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation.
Published: |