GENERAL DESCRIPTION
In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMNP16MM uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM. FEATURES
w Access time : 70, 85 and 100ns w High-density design : 16Mbyte Design w Battery internally isolated until power is applied w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Industrial temperature operation OPTIONS w Timing 70 ns 85 ns 100 ns MARKING - 70 - 85 -100 URL : Rev. 0.0 (April, 2002) 1 HANBit Electronics Co.,Ltd HANBit PIN ASSIGNMENT HMNP16MM P1 PIN 1 3...