GENERAL DESCRIPTION
In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMNP32MM uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM. FEATURES
w Access time : 70, 85 and 100ns w High-density design : 32Mbyte Design w Battery internally isolated until power is applied w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Industrial temperature operation OPTIONS w Timing 55 ns 70 ns MARKING - 55 - 70 URL : Rev. 0.0 (April, 2002) 1 HANBit Electronics Co.,Ltd HANBit PIN ASSIGNMENT HMNP32MM P1 PIN 1 3 5 7 9 11 13...