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HGT1S3N60C3DS

Manufacturer: Harris Corporation

HGT1S3N60C3DS datasheet by Harris Corporation.

This datasheet includes multiple variants, all published together in a single manufacturer document.

HGT1S3N60C3DS datasheet preview

HGT1S3N60C3DS Datasheet Details

Part number HGT1S3N60C3DS
Datasheet HGT1S3N60C3DS HGTP3N60C3D Datasheet (PDF)
File Size 248.09 KB
Manufacturer Harris Corporation
Description UFS Series N-Channel IGBT
HGT1S3N60C3DS page 2 HGT1S3N60C3DS page 3

HGT1S3N60C3DS Overview

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices bining the.

HGT1S3N60C3DS Key Features

  • 6A, 600V at TC = 25oC
  • 600V Switching SOA Capability
  • Typical Fall Time
  • 130ns at TJ = 150oC
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

HGT1S3N60C3DS from other manufacturers

View HGT1S3N60C3DS datasheet index

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo HGT1S3N60C3DS 6A 600V UFS Series N-Channel IGBT Fairchild Semiconductor
Intersil Corporation Logo HGT1S3N60C3DS 6A 600V UFS Series N-Channel IGBT Intersil Corporation
Fairchild Semiconductor Logo HGT1S3N60C3D 6A 600V UFS Series N-Channel IGBT Fairchild Semiconductor
Harris Corporation logo - Manufacturer

More Datasheets from Harris Corporation

View all Harris Corporation datasheets

Part Number Description
HGT1S3N60C3D UFS Series N-Channel IGBT
HGTG12N60C3D UFS Series N-Channel IGBT
HGTP3N60C3D UFS Series N-Channel IGBT

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