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IRF512 Datasheet (irf510 - Irf513) N-channel Power MOSFETs

Manufacturer: Harris Corporation

Overview: www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number IRF512
Manufacturer Harris Corporation
File Size Direct Link
Description (IRF510 - IRF513) N-Channel Power MOSFETs
Datasheet IRF512 IRF510 Datasheet (PDF)

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 4.9A, and 5.6A, 80V and 100V.
  • rDS(ON) = 0.54Ω and 0.74Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513.

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