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IRF512 - (IRF510 - IRF513) N-Channel Power MOSFETs

Download the IRF512 datasheet PDF. This datasheet also covers the IRF510 variant, as both devices belong to the same (irf510 - irf513) n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 4.9A, and 5.6A, 80V and 100V.
  • rDS(ON) = 0.54Ω and 0.74Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF510_HarrisCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF512
Manufacturer Harris Corporation
File Size Direct Link
Description (IRF510 - IRF513) N-Channel Power MOSFETs
Datasheet download datasheet IRF512 Datasheet

📁 Similar Datasheet

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IRF510 N-Channel MOSFET Transistor Inchange Semiconductor
IRF510 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by Harris Corporation

Part Number Description
IRF511 (IRF510 - IRF513) N-Channel Power MOSFETs
IRF513 (IRF510 - IRF513) N-Channel Power MOSFETs
IRF530 N-Channel MOSFET
IRF531 N-Channel Power MOSFET
IRF531R N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441. January 1998 Features • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.