IRFBC42
Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
Key Features
- 6.2A and 5.4A, 600V
- rDS(ON) = 1.2Ω and 1.6Ω
- Repetitive Avalanche Energy Rated
- Simple Drive Requirements
- Ease of Paralleling
- Part: IRFBC42
- Description: N-Channel Power MOSFET
- Category: MOSFET
- Manufacturer: Harris Corporation
- Size: 66.92 KB