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IRFBC42 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 6.2A and 5.4A, 600V.
  • rDS(ON) = 1.2Ω and 1.6Ω.
  • Repetitive Avalanche Energy Rated.
  • Simple Drive Requirements.
  • Ease of Paralleling.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFBC40 IRFBC42.

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Datasheet Details

Part number IRFBC42
Manufacturer Harris Corporation
File Size 66.92 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRFBC42 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. January 1998 Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.