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MUR3015PT - (MUR3010PT - MUR3020PT) Ultrafast Dual Diodes

Download the MUR3015PT datasheet PDF. This datasheet also covers the MUR3010PT variant, as both devices belong to the same (mur3010pt - mur3020pt) ultrafast dual diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR < 30ns) with soft recovery characteristics.

They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Key Features

  • Ultrafast with Soft Recovery Characteristic (tRR < 30ns).
  • +175oC Rated Junction Temperature.
  • Reverse Voltage Up to 200V.
  • Avalanche Energy Rated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR3010PT_HarrisCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR3015PT
Manufacturer Harris Corporation
File Size 57.77 KB
Description (MUR3010PT - MUR3020PT) Ultrafast Dual Diodes
Datasheet download datasheet MUR3015PT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com S E M I C O N D U C T O R MUR3010PT, RURH1510CC, MUR3015PT, RURH1515CC, MUR3020PT, RURH1520CC 15A, 100V - 200V Ultrafast Dual Diodes Package JEDEC TO-218AC April 1995 Features • Ultrafast with Soft Recovery Characteristic (tRR < 30ns) • +175oC Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose CATHODE (FLANGE) ANODE1 CATHODE ANODE2 Description MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR < 30ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.