Harris Semiconductor BUZ351
11.5A 400V N-Channel Power MOSFET
| Part No. | BUZ351 |
|---|---|
| Datasheet | BUZ351 Download |
| Manufacturer |  Harris Semiconductor |
| Description | 11.5A 400V N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
[ /Title (BUZ35 1) /Sub- MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching● 11.5A, 400V
● rDS(ON) = 0.400Ω
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds ject (11.5A, 400V, 0.400 Ohm, transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA17434. Ordering Information
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device
● Related Literature N-Chan- PART NUMBER PACKAGE nel BUZ351 TO-218AC BRAND BUZ351 - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Power NOTE: When ordering, use the entire part number. Symbol MOS- D FET) /Author () G /Key- words S (Harris Semiconduc- Packaging tor, N- JEDEC TO-218AC Channel Power DRAIN (FLANGE)...