RHRG5050 Datasheet | Harris Semiconductor

Features - Hyperfast with Soft Recovery - - - . <45ns - Operating Temperature - - - - +175 C - Reverse Voltage Up To - - - - . . 600V - Avalanche Energy Rated - Planar Construction o Applications - Switching Power Supplies - Power Switching Circuits .. - General Purpose Symbol Description RHRG5040, RHRG5050 and RHRG5060 (TA49065) are hyperfast diodes with soft recovery characteristics (t RR <45ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. PACKAGING AVAILABILITY PART NUMBER RHRG5040 RHRG5050 RHRG5060 PACKAGE TO-247 TO-247 TO-247 BRAND RHRG5040 RHRG5050 RHRG5060 NOTE: When ordering, use the entire part number. TC = +25o C, Unless Otherwise Specified RHRG5040 Peak Repetitive Reverse Voltage - - - . . .VRRM Working Peak Reverse Voltage - - - . . . VRWM DC Blocking Voltage- - - - - - VR Average Rectified Forward Current - - - . IF(AV) (TC = +93o C) Repetitive Peak Surge Current- - - - .IFSM (Square Wave, 20k Hz) Nonrepetitive Peak Surge Current - - - . . .IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation - - - - . . . PD Avalanche Energy (L = 40m H) - - - - EAVL Operating and Storage Temperature - - . . TSTG,...