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F45N03L - N-Channel Power MOSFET

General Description

These are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 45A, 30V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

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Datasheet Details

Part number F45N03L
Manufacturer Harris
File Size 99.62 KB
Description N-Channel Power MOSFET
Datasheet download datasheet F45N03L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor September 1998 RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs [ /Title (RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M) /Subject (45A, 30V, 0.022 Ohm, Features • 45A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.