HGTG40N60B3
Description
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 70A, 600V at TC = +25 C
- Square Switching SOA Capability
- Typical Fall Time - 160ns at +150oC
- Short Circuit Rating
- Low Conduction Loss o
