Datasheet Summary
S E M I C O N D U C T O R
70A, 600V, UFS Series N-Channel IGBT
Package
JEDEC STYLE TO-247
PRELIMINARY
May 1995
Features
- 70A, 600V at TC = +25 C
- Square Switching SOA Capability
- Typical Fall Time
- 160ns at +150oC
- Short Circuit Rating
- Low Conduction Loss o
Description
The HGTG40N60B3 is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching applications operating...
