Harris IRF221
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | IRF221 |
|---|---|
| Datasheet | IRF221 Download |
| Manufacturer |  Harris |
| Description | N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 4.0A and 5.0A, 150V and 200V● rDS(ON) = 0.8Ω and 1.2Ω
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 IRF222 TO-204AA IRF222 IRF223 TO-204AA IRF223 NOTE: When ordering, use the entire part number.
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
