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IRF321 Datasheet N-channel Power MOSFETs

Manufacturer: Harris

Overview: Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 2.8A and 3.3A, 350V and 400V.
  • rDS(ON) = 1.8Ω and 2.5Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

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More Datasheets from Harris

Part Number Description
IRF320 N-Channel Power MOSFETs
IRF322 N-Channel Power MOSFETs
IRF323 N-Channel Power MOSFETs
IRF140 N-Channel Power MOSFETs
IRF141 N-Channel Power MOSFETs
IRF142 N-Channel Power MOSFETs
IRF143 N-Channel Power MOSFETs
IRF220 N-Channel Power MOSFETs
IRF221 N-Channel Power MOSFETs
IRF222 N-Channel Power MOSFETs

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