Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Features
- 2.8A and 3.3A, 350V and 400V.
- rDS(ON) = 1.8Ω and 2.5Ω.
- Single Pulse Avalanche Energy Rated.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- Majority Carrier Device.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER IRF320 IRF321 IRF322 IRF323.
IRF321 Datasheet
