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Semiconductor
July 1998
IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs
Features
Description
• -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
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PACKAGE
BRAND
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.