RF1S30P05 Datasheet | Harris

SEMICONDUCTOR RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM December 1995 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Features - 30A, 50V - r DS(ON) = 0.065Ω - Temperature pensating PSPICE Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - +175o C Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFG30P05 TO-247 RFG30P05 RFP30P05 TO-220AB RFP30P05 TO-262AA F1S30P05 RF1S30P05SM TO-263AB F1S30P05 NOTE: When ordering...