Harris RF1S9540SM
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | RF1S9540SM |
|---|---|
| Datasheet | RF1S9540SM Download |
| Manufacturer |  Harris |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
DESCRIPTION
● -15A and -19A, -80V and -100V● rDS(ON) = 0.20Ω and 0.30Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Symbol D IRF9540 IRF9541 IRF9542 TO-220AB TO-220AB...
