Datasheet Summary
RFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
July 1995
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Features
- 30A, 60V
- rDS(ON) = 0.047Ω
- 2kV ESD Protected
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters,...
