RFP70N03 Datasheet | Harris

SEMICONDUCTOR RFP70N03, RF1S70N03, RF1S70N03SM December 1995 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features - 70A, 30V - rDS(ON) = 0.010Ω - Temperature pensating PSPICE Model - Peak Current vs Pulse Width Curve - UIS Rating Curve (Single Pulse) - +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor...