Datasheet4U Logo Datasheet4U.com

RHRP840 - 400V - 600V Hyperfast Diodes

General Description

RHRP840, RHRP850 and RHRP860 (TA49059) are hyperfast diodes with soft recovery characteristics (tRR < 30ns).

They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

Key Features

  • Hyperfast with Soft Recovery.
  • .

📥 Download Datasheet

Datasheet Details

Part number RHRP840
Manufacturer Harris
File Size 51.66 KB
Description 400V - 600V Hyperfast Diodes
Datasheet download datasheet RHRP840 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RHRP840 8A/ 400V - 600V Hyperfast Diodes Fairchild Semiconductor
RHRP840 8A/ 400V - 600V Hyperfast Diodes Intersil Corporation
RHRP840CC 8A/ 400V - 600V Hyperfast Dual Diodes Intersil Corporation
RHRP8100 8A/ 1000V Hyperfast Diode Intersil Corporation
RHRP8100CC 8A/ 1000V Hyperfast Dual Diode Intersil Corporation

Other Datasheets by Harris

Part Number Description
RHRP850 400V - 600V Hyperfast Diodes
RHRP860 400V - 600V Hyperfast Diodes
RHRP1540 Hyperfast Diodes
RHRP1550 Hyperfast Diodes
RHRP1560 Hyperfast Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S E M I C O N D U C T O R RHRP840, RHRP850, RHRP860 8A, 400V - 600V Hyperfast Diodes Package JEDEC TO-220AC o April 1995 Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . .+175 C • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V ANODE • Avalanche Energy Rated • Planar Construction CATHODE (FLANGE) CATHODE Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Description RHRP840, RHRP850 and RHRP860 (TA49059) are hyperfast diodes with soft recovery characteristics (tRR < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.