KLT1C12DC24 Datasheet | Hasco

DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad. 4.5±0.1 PACKAGE DIMENSIONS (Unit: mm) FEATURES - Low Noise and High Gain. NF: 2.3 d B, 2.4 d B S21e: 20 d B, 12.5 d B - Large PT in Small Package. PT: 2 W with 16 cm × 0.7 mm Ceramic Substrate. 1.6±0.2 1.5±0.1 0.8 MIN. 0.42 ±0.06 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 - 0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT- Rth(j-a)- Tj Tstg 35 18 3.0 150 2.0 62.5 150 - 65 to +150 V V V m A W °C/W °C °C Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) - With 16 cm × 0.7 mm Ceramic Substrate  h FE Classification Class Marking h FE QK QK 30 to 200 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC pound Semiconductor Devices representative for availability and additional information. Document No. PU10034EJ01V0DS (1st edition) (Previous No. P10405EJ3V0DS00) Date Published October 2001 CP(K) Printed in Japan The mark  shows major revised points.  NEC Corporation 1994  NEC pound Semiconductor Devices 2001 Free Datasheet http://.. 2.5±0.1 f = 200 MHz, 500 MHz 4.0±0.25 2SC2954 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance SYMBOL ICBO h FE f T Cre S21e2 TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 50 m A - 1 VCE = 10 V, IC = 50 m A VCB = 10 V, Emitter Grounded, f = 1.0 MHz VCE = 10 V, IC = 50 m A, f = 500 MHz RG = 50 Ω VCE = 10 V, IC = 30 m A, f = 500 MHz RG = 50 Ω 10 30 3.0 100 4.0 1.1 1.8 MIN. TYP. MAX. 100 200 UNIT n...