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H3S120E020 - 1200V/20A SiC Schottky Barrier Diode

Features

  • s Circuit Diagram.
  • Low Conduction and Switching Loss.
  • Zero Reverse Recovery.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient Device.
  • High Surge Current Capability.
  • RoHS Compliant and Halogen Free.
  • Optimized for High Power.

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Datasheet Details

Part number H3S120E020
Manufacturer Hestia Power
File Size 426.72 KB
Description 1200V/20A SiC Schottky Barrier Diode
Datasheet download datasheet H3S120E020 Datasheet

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Full PDF Text Transcription

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H3S120E020 Part Number H3S120E020 Package TO-247-3L Marking H3S120E020 1200V/20A, SiC Schottky Barrier Diode H3S120E020 Datasheet Product Summary VR 1200V IF(135/154°C) 30A/20A** QC 112nC** Features Circuit Diagram ◼ Low Conduction and Switching Loss ◼ Zero Reverse Recovery ◼ Temperature Independent Switching Behavior ◼ Positive Temperature Coefficient Device ◼ High Surge Current Capability ◼ RoHS Compliant and Halogen Free ◼ Optimized for High Power Application ◼ AEC-Q101 Qualified (3) (2) Case 3 (1) 2 1 Benefits ◼ Higher System Efficiency ◼ Increase Parallel Device Convenience ◼ Enable High Temperature Application ◼ Allow High Frequency Operation ◼ Realize Compact and Lightweight Systems ◼ High Reliability Applications ◼ Switching Mode Power Supply ◼ PFC ◼ UPS ◼ Moto
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