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HSCH-5300 - Beam Lead Schottky Diodes

This page provides the datasheet information for the HSCH-5300, a member of the HSCH-5300_Hewlett Beam Lead Schottky Diodes family.

Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

Features

  • Platinum Tri-Metal System High Temperature Stability.
  • Silicon Nitride Passivation Stable, Reliable Performance.
  • Low Noise Figure Guaranteed 7.5 dB at 26 GHz.
  • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics.
  • Rugged Construction 4 Grams Minimum Lead Pull.
  • Low Capacitance 0.10 pF Max. at 0 V.
  • Polyimide Scratch Protection Outline 07.

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Datasheet preview – HSCH-5300

Datasheet Details

Part number HSCH-5300
Manufacturer Hewlett-Packard
File Size 102.33 KB
Description Beam Lead Schottky Diodes
Datasheet download datasheet HSCH-5300 Datasheet
Additional preview pages of the HSCH-5300 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300 Series Features • Platinum Tri-Metal System High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance • Low Noise Figure Guaranteed 7.5 dB at 26 GHz • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics • Rugged Construction 4 Grams Minimum Lead Pull • Low Capacitance 0.10 pF Max. at 0 V • Polyimide Scratch Protection Outline 07 CATHODE 130 (5) 100 (4) GOLD LEADS 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7) 12 (.5) 8 (.3) 30 MIN (1) Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
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