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MSA-0136 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0136 datasheet PDF. This datasheet also covers the MSA-0135_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The MSA-0135 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package.

Key Features

  • Cascadable 50 Ω Gain Block.
  • 3 dB Bandwidth: DC to 1.2 GHz.
  • High Gain: 18.5 dB Typical at 0.5 GHz.
  • Unconditionally Stable (k>1).
  • Cost Effective Ceramic Microstrip Package purpose 50 Ω gain block. Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0135_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0136
Manufacturer Hewlett-Packard
File Size 81.69 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0136 Datasheet

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Other Datasheets by Hewlett-Packard

Part Number Description
MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0170 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0185 Cascadable Silicon Bipolar MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data www.DataSheet4U.com MSA-0135, -0136 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.2 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.