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MSA-0300 - Cascadable Silicon Bipolar MMIC Amplifier

This page provides the datasheet information for the MSA-0300, a member of the MSA-0300_Hewlett Cascadable Silicon Bipolar MMIC Amplifier family.

Datasheet Summary

Description

The MSA-0300 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip.

This MMIC is designed for use as a general purpose 50 Ω gain block.

Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

Features

  • Cascadable 50 Ω Gain Block.
  • 3 dB Bandwidth: DC to 2.8 GHz.
  • 12.0 dB Typical Gain at 1.0␣ GHz.
  • 10.0␣ dBm Typical P 1 dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibi.

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Datasheet preview – MSA-0300

Datasheet Details

Part number MSA-0300
Manufacturer Hewlett-Packard
File Size 57.51 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0300 Datasheet
Additional preview pages of the MSA-0300 datasheet.

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Full PDF Text Transcription

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Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0300 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • 10.0␣ dBm Typical P 1 dB at 1.0␣ GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”.
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