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MSA-0735 - (MSA-0735 / MSA-0736) Cascadable Silicon Bipolar MMIC Amplifier

This page provides the datasheet information for the MSA-0735, a member of the MSA-0735_Hewlett (MSA-0735 / MSA-0736) Cascadable Silicon Bipolar MMIC Amplifier family.

Datasheet Summary

Description

The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 4.0 V 2 5965-9591E 6-394 MSA-0735, -0736 Absolute Maximum Ratings P

Features

  • Cascadable 50 Ω Gain Block.
  • Low Operating Voltage: 4.0 V Typical Vd.
  • 3 dB Bandwidth: DC to 2.4 GHz.
  • 13.0 dB Typical Gain at 1.0␣ GHz.
  • Unconditionally Stable (k>1).
  • Cost Effective Ceramic Microstrip Package microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical.

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Datasheet preview – MSA-0735

Datasheet Details

Part number MSA-0735
Manufacturer Hewlett-Packard
File Size 76.82 KB
Description (MSA-0735 / MSA-0736) Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0735 Datasheet
Additional preview pages of the MSA-0735 datasheet.
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Full PDF Text Transcription

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Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0735, -0736 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.4 GHz • 13.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
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