MSA0885
Features
- Usable Gain to 6.0␣ GHz
- High Gain: 32.5 d B Typical at 0.1␣ GHz 22.5 d B Typical at 1.0␣ GHz
- Low Noise Figure: 3.3␣ d B Typical at 1.0␣ GHz
- Low Cost Plastic Package purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in mercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
85 Plastic Package
Description
The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general
Typical Biasing Configuration
R bias VCC > 10...
