SFF7N65 Datasheet | Hi-Semicon

DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hisemicon proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES - VDS=7A,ID=650V - RDS(on)(typ)=1.13@VGS=10V,ID=3.5A - Low Crss:8.7p F@VDS=25V - Fast switching - Improved dv/dt capability 1 23 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No. SFF7N65 Package TO-220F-3L Http://.hi-semicon. Marking SFF7N65 Material Pb free Packing Tube Rev 1.1 Page 1 of 8 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage Gate-Source...