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SFF7N65 - 7A 650V N-CHANNEL MOSFET

Description

This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hisemicon proprietary F-CellTM structure VDMOS technology.

Features

  • VDS=7A,ID=650V.
  • RDS(on)(typ)=1.13@VGS=10V,ID=3.5A.
  • Low Crss:8.7pF@VDS=25V.
  • Fast switching.
  • Improved dv/dt capability SFF7N65 1 23 1:Gate 2:Darin 3:Source.

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Datasheet Details

Part number SFF7N65
Manufacturer Hi-Semicon
File Size 1.29 MB
Description 7A 650V N-CHANNEL MOSFET
Datasheet download datasheet SFF7N65 Datasheet
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Full PDF Text Transcription

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hisemicon proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ◆ VDS=7A,ID=650V ◆ RDS(on)(typ)=1.13@VGS=10V,ID=3.5A ◆ Low Crss:8.7pF@VDS=25V ◆ Fast switching ◆ Improved dv/dt capability SFF7N65 1 23 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No.
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