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7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hisemicon proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
◆ VDS=7A,ID=650V ◆ RDS(on)(typ)=1.13@VGS=10V,ID=3.5A ◆ Low Crss:8.7pF@VDS=25V ◆ Fast switching ◆ Improved dv/dt capability
SFF7N65
1 23 1:Gate 2:Darin 3:Source
ORDERING INFORMATION
Part No.