SFF7N65 Description
This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hisemicon proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These...
SFF7N65 Key Features
- VDS=7A,ID=650V
- RDS(on)(typ)=1.13@VGS=10V,ID=3.5A
- Low Crss:8.7pF@VDS=25V
- Fast switching
- Improved dv/dt capability