Hi-Sincerity Mocroelectronics H03N60
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.| Part No. | H03N60 |
|---|---|
| Datasheet | H03N60 Download |
| Manufacturer |  Hi-Sincerity Mocroelectronics |
| Description | N-Channel Power Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 1 2 3 D G SFEATURES
H03N60 Series Symbol:● Robust High Voltage Termination
● Avalanc he Energy Specified
● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
● Diode is Characterized for Use in Bridge Circuits
● IDSS and VDS(on) Specified at Elevated Temperature
ABSOLUTE MAXIMUM RATINGS
Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to...
