H03N60 - N-Channel Power Field Effect Transistor

This page provides the datasheet information for the H03N60, a member of the H03N60_Hi N-Channel Power Field Effect Transistor family.

Product Overview

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H03N60
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	92.33 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H03N60 Datasheet
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H03N60 Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

H03N60 Series Symbol:.
Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H03N60.

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Published: Mar 24, 2008 |