H03N60 Datasheet | Hi-Sincerity Mocroelectronics

.. HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and...