H03N60 Datasheet N-Channel Power Field Effect Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Download the H03N60 datasheet PDF. This datasheet also includes the H03N60_Hi variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

H03N60 n-channel power field effect transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H03N60_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H03N60
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	92.33 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H03N60 Datasheet

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP.

Spec.

No.

Key Features

H03N60 Series Symbol:.
Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H03N60.

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number	Description