H03N60 Overview
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
H03N60 Key Features
- Robust High Voltage Termination
- Avalanc he Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature