H04N60 Datasheet N-channel Power Field Effect Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: ..net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H04N60
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	108.96 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H04N60 H04N60_Hi Datasheet (PDF)

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H04N60E (TO-2.

Part Number	Description