H04N60 - N-Channel Power Field Effect Transistor

This page provides the datasheet information for the H04N60, a member of the H04N60_Hi N-Channel Power Field Effect Transistor family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H04N60
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	108.96 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H04N60 Datasheet
Additional preview pages of the H04N60 datasheet.

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H04N60E (TO-2.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Aug 16, 2011 |