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H04N60 - N-Channel Power Field Effect Transistor

Product Overview

Hi-Sincerity Mocroelectronics

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H04N60 N-Channel Power Field Effect Transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H04N60

Datasheet Details

Part number	H04N60
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	108.96 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H04N60 Datasheet
Note	This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H04N60 datasheet.

Product details

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

Features

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H04N60E (TO-2.

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Published: Aug 16, 2011 |