H1N5820 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H1N5820, a member of the H1N5820_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The H2584 is designed for use in low voltage and low dropout regulator applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H1N5820
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	32.94 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H1N5820 Datasheet
Additional preview pages of the H1N5820 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No. : 1/3 H2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2584 is designed for use in low voltage and low dropout regulator applications. Absolute Maximum Ratings TO-220 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .......

Published: Mar 22, 2005 |