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H2N3417 - NPN SILICON TRANSISTOR

Download the H2N3417 datasheet PDF. This datasheet also covers the H2N3417_Hi variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation

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Note: The manufacturer provides a single datasheet file (H2N3417_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N3417
Manufacturer Hi-Sincerity Mocroelectronics
File Size 44.48 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet H2N3417 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..............................................................................