H2N3417 - NPN SILICON TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N3417 datasheet PDF. This datasheet also covers the H2N3417_Hi variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation

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H2N3417 npn silicon transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N3417_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N3417
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	44.48 KB
Description	NPN SILICON TRANSISTOR
Datasheet	H2N3417 Datasheet

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Full PDF Text Transcription for H2N3417 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for H2N3417. For precise diagrams, tables, and layout, please refer to the original PDF.

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HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..............................................................................