H2N3417 - NPN SILICON TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N3417 datasheet PDF. This datasheet also covers the H2N3417_Hi variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation

📥 Download Datasheet

H2N3417 npn silicon transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N3417_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N3417
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	44.48 KB
Description	NPN SILICON TRANSISTOR
Datasheet	H2N3417 Datasheet

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number	Description
H2N3904	PNP EPITAXIAL PLANAR TRANSISTOR
H2N3906	PNP EPITAXIAL PLANAR TRANSISTOR
H2N4124	NPN EPITAXIAL PLANAR TRANSISTOR
H2N4126	PNP EPITAXIAL PLANAR TRANSISTOR
H2N4401	NPN EPITAXIAL PLANAR TRANSISTOR
H2N4403	PNP EPITAXIAL PLANAR TRANSISTOR
H2N5087	PNP EPITAXIAL PLANAR TRANSISTOR
H2N5088	NPN EPITAXIAL PLANAR TRANSISTOR
H2N5089	NPN EPITAXIAL PLANAR TRANSISTOR
H2N5366	PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..............................................................................