H2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N3906 datasheet PDF. This datasheet also covers the H2N3906_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N3906 is designed for general purpose switching and amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW

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H2N3906 pnp epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N3906_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N3906
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.40 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/5 Description The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)...............................................................................................................