H2N5401
Description
The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
Key Features
- plements to NPN Type H2N5551
- High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92
- Part: H2N5401
- Description: PNP EPITAXIAL PLANAR TRANSISTOR
- Category: Transistor
- Manufacturer: Hi-Sincerity Mocroelectronics
- Size: 52.59 KB