H2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5401, a member of the H2N5401_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H2N5401
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.59 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5401 Datasheet
Additional preview pages of the H2N5401 datasheet.

The H2N5401 is designed for general purpose applications requiring high breakdown voltages.

Complements to NPN Type H2N5551.
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Bas.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |