H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N5551, a member of the H2N5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H2N5551
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.66 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5551 Datasheet
Additional preview pages of the H2N5551 datasheet.

The H2N5551 is designed for amplifier transistor.

Complements to PNP Type H2N5401.
High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 180 V VCEO Collector to Emitter Voltage 160 V VEBO Emitter to Base Voltage 6 V IC Coll.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |