H2N5551 Overview
The H2N5551 is designed for amplifier transistor.
H2N5551 Key Features
- plements to PNP Type H2N5401
- High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | H2N5551 |
|---|---|
| Datasheet | H2N5551 H2N5551_Hi Datasheet (PDF) |
| File Size | 52.66 KB |
| Manufacturer | Hi-Sincerity Mocroelectronics |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
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The H2N5551 is designed for amplifier transistor.
See all Hi-Sincerity Mocroelectronics datasheets
| Part Number | Description |
|---|---|
| H2N5087 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N5088 | NPN EPITAXIAL PLANAR TRANSISTOR |
| H2N5089 | NPN EPITAXIAL PLANAR TRANSISTOR |
| H2N5366 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N5401 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N3417 | NPN SILICON TRANSISTOR |
| H2N3904 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N3906 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N4124 | NPN EPITAXIAL PLANAR TRANSISTOR |
| H2N4126 | PNP EPITAXIAL PLANAR TRANSISTOR |