H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N5551 datasheet PDF. This datasheet also covers the H2N5551_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N5551 is designed for amplifier transistor.

Key Features

Complements to PNP Type H2N5401.
High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 180 V VCEO Collector to Emitter Voltage 160 V VEBO Emitter to Base Voltage 6 V IC Coll.

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H2N5551 npn epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N5551_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N5551
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.66 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5551 Datasheet

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Full PDF Text Transcription for H2N5551 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for H2N5551. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................