H2N5551 Description
The H2N5551 is designed for amplifier transistor.
H2N5551 Key Features
- plements to PNP Type H2N5401
- High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
- Part: H2N5551
- Manufacturer: Hi-Sincerity Mocroelectronics
- Size: 52.66 KB
Related Hi-Sincerity Mocroelectronics Datasheets
| Part Number | Description |
|---|---|
| H2N5087 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N5088 | NPN EPITAXIAL PLANAR TRANSISTOR |
| H2N5089 | NPN EPITAXIAL PLANAR TRANSISTOR |
| H2N5366 | PNP EPITAXIAL PLANAR TRANSISTOR |
| H2N5401 | PNP EPITAXIAL PLANAR TRANSISTOR |