H2N5551
Description
The H2N5551 is designed for amplifier transistor.
Key Features
- plements to PNP Type H2N5401
- High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92
- Part: H2N5551
- Description: NPN EPITAXIAL PLANAR TRANSISTOR
- Category: Transistor
- Manufacturer: Hi-Sincerity Mocroelectronics
- Size: 52.66 KB