H2N6426 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N6426, a member of the H2N6426_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

Darlington Transistor Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW Maximum Voltages and Currents (TA=25°C) BVCEO Collec

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N6426
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.19 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N6426 Datasheet
Additional preview pages of the H2N6426 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4 Description Darlington Transistor Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................

Published: Mar 22, 2005 |