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H2N6517 Datasheet NPN EPITAXIAL PLANAR TRANSISTOR

Manufacturer: Hi-Sincerity Mocroelectronics

Download the H2N6517 datasheet PDF. This datasheet also includes the H2N6517_Hi variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (H2N6517_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N6517
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.71 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Download H2N6517 Download (PDF)

General Description

The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

Overview

HI-SINCERITY MICROELECTRONICS CORP.

Spec.

No.

Key Features

  • High Collector-Emitter Breakdown Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents.

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