H2N6517
Description
The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
Key Features
- High Collector-Emitter Breakdown Voltage
- Low Collector-Emitter Saturation Voltage
- Part: H2N6517
- Description: NPN EPITAXIAL PLANAR TRANSISTOR
- Category: Transistor
- Manufacturer: Hi-Sincerity Mocroelectronics
- Size: 51.71 KB