H2N6517 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N6517, a member of the H2N6517_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

Features

High Collector-Emitter Breakdown Voltage.
Low Collector-Emitter Saturation Voltage.
The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents.

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N6517
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.71 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N6517 Datasheet
Additional preview pages of the H2N6517 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................

Published: Mar 22, 2005 |