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H2N6668 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N6668, a member of the H2N6668_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N6668 is designed for general-purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C)

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Datasheet preview – H2N6668

Datasheet Details

Part number H2N6668
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.44 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N6668 Datasheet
Additional preview pages of the H2N6668 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/4 Description The H2N6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ............................................................................................................................... -55~+150°C Junction Temperature ..................................................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ..................................................................................................
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