• Part: H40N03E
  • Description: N-Channel Enhancement-Mode MOSFET
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 87.49 KB
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H40N03E datasheet preview
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H40N03E page 3
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H40N03E Key Features

  • RDS(on)=16mΩ@VGS=10V, ID=20A
  • RDS(on)=25mΩ@VGS=4.5V, ID=20A
  • Advanced trench process technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for DC/DC Converters and Motor Drivers
  • Fully Characterized Avalanche Voltage and Current
  • Improved Shoot-Through FOM
  • 1: Maximum DC current limited by the package. -2: 1-in2 2oz Cu PCB board
  • 1.6 1 6
  • V mΩ V uA nA Ω S