H40N03E - N-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H40N03E, a member of the H40N03E_Hi N-Channel Enhancement-Mode MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H40N03E
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	87.49 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	H40N03E Datasheet
Additional preview pages of the H40N03E datasheet.

RDS(on)=16mΩ@VGS=10V, ID=20A.
RDS(on)=25mΩ@VGS=4.5V, ID=20A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

H4001 - READ-ONLY CONTACTLESS IDENTIFICATION DEVICE (EM Microelectronic)
H4005 - ISO 11 784 / 11 785 COMPLIANT READ ONLY CONTACTLESS IDENTIFICATION DEVICE (ETC)
H4006 - Read Only Contactless Identification Device (EM Microelectronic)
H40517MN - 10/100 BASE-T TRANSFORMER (M-TEK)
H40518MN - 10/100 BASE-T TRANSFORMER (M-TEK)
H40519MN - 10/100 BASE-T TRANSFORMER (M-TEK)
H40519MN - 10/100 Base-T Transformer (FPE)
H40519MN-R - 10/100 Base-T Transformer (FPE)
H40520MN - 10/100 BASE-T TRANSFORMER (M-TEK)
H40520MN - 10/100 Base-T Transformer (FPE)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Oct 17, 2009 |