• Part: H4422S
  • Description: N-Channel Enhancement-Mode MOSFET
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 169.22 KB
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H4422S Key Features

  • RDS(on)=13.5mΩ@VGS=10V, ID=11A
  • RDS(on)=24mΩ@VGS=4.5V, ID=5A
  • Advanced trench process technology
  • High Density Cell Design for Ultra Low On-Resistance

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