• Part: H4435S
  • Description: P-Channel Enhancement-Mode MOSFET
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 170.63 KB
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H4435S Key Features

  • RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
  • RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
  • Advanced trench process technology
  • High Density Cell Design for Ultra Low On-Resistance

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H4422S N-Channel Enhancement-Mode MOSFET