H4435S
Key Features
- RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
- RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
- Advanced trench process technology
- Part: H4435S
- Description: P-Channel Enhancement-Mode MOSFET
- Category: MOSFET
- Manufacturer: Hi-Sincerity Mocroelectronics
- Size: 170.63 KB