H4435S - P-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H4435S, a member of the H4435S_Hi P-Channel Enhancement-Mode MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H4435S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	170.63 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	H4435S Datasheet
Additional preview pages of the H4435S datasheet.

RDS(on)=20mΩ@VGS=-10V, ID=-9.1A.
RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
1 o Parameter Ratings -30 ±20 -9.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Dec 1, 2013 |