H45N03E - N-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H45N03E, a member of the H45N03E_Hi N-Channel Enhancement-Mode MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H45N03E
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	87.42 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	H45N03E Datasheet
Additional preview pages of the H45N03E datasheet.

RDS(on)=15mΩ@VGS=10V, ID=25A.
RDS(on)=20mΩ@VGS=4.5V, ID=25A www. DataSheet4U. com.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Sep 23, 2008 |