H6968S - Dual N-Channel MOSFET

This page provides the datasheet information for the H6968S, a member of the H6968CS_Hi Dual N-Channel MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H6968S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	78.98 KB
Description	Dual N-Channel MOSFET
Datasheet	H6968S Datasheet
Additional preview pages of the H6968S datasheet.

RDS(on)=32mΩ@VGS=2.5V, ID=5.5A.
RDS(on)=24mΩ@VGS=4.5V, ID=6.5A.
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Li ion Battery Packs Use.
Designed for Battery Switch Appliactions.
ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Dec 13, 2007 |