H9435S
Key Features
- RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
- RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
- Advanced Trench Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM
