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H9435S - P-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H9435S, a member of the H9435S_Hi P-Channel Enhancement-Mode MOSFET family.

Datasheet Summary

Features

  • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A.
  • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A.
  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Fully Characterized Avalanche Voltage and Current.
  • Improved Shoot-Through FOM 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJC RθJA Drain-Source Voltage Ga.

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Datasheet preview – H9435S

Datasheet Details

Part number H9435S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 169.34 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H9435S Datasheet
Additional preview pages of the H9435S datasheet.

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    Full PDF Text Transcription

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    www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9435S P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) • 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.
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