HA3669 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HA3669
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	45.23 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HA3669 Datasheet
Note	This datasheet PDF includes multiple part numbers: HA3669, HA3669_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HA3669 datasheet.

Product details

Description

The HA3669 is designed for using in power amplifier applications, power switching application. Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW Maximum Voltages and Currents BVCBO Collector to Base Breakdown Voltage

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Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 22, 2005 |