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HA3669 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HA3669 datasheet PDF. This datasheet also covers the HA3669_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HA3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipat

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Note: The manufacturer provides a single datasheet file (HA3669_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HA3669
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HA3669 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 Description The HA3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-92 • Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..................................................................................