• Part: HBC237
  • Description: NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 39.69 KB
Download HBC237 Datasheet PDF
Hi-Sincerity Mocroelectronics
HBC237
Description The HBC237 is primarily intended for in driver stage of audio amplifiers. Features High Breakdown Voltage: 45V at IC=2m A Absolute Maximum Ratings - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 m W - Maximum Voltages and Currents (Ta=25°C) VCES Collector to Emitter Voltage 50 V VCEO Collector to Emitter Voltage...