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HBC237 Datasheet NPN Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC237
Manufacturer Hi-Sincerity Mocroelectronics
File Size 39.69 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC237 HBC237_Hi Datasheet (PDF)

General Description

The HBC237 is primarily intended for in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCES Collector to Emitter Voltage 50 V VCEO Collector to Emitter Voltage.

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