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HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBC237 datasheet PDF. This datasheet also covers the HBC237_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBC237 is primarily intended for in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCES Collector to Emitter Voltage 50 V VCEO Collector to Emitter Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC237_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC237
Manufacturer Hi-Sincerity Mocroelectronics
File Size 39.69 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC237 Datasheet

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HBC327 PNP EPITAXIAL PLANAR TRANSISTOR
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
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HBC556 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No. : 1/4 HBC237 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC237 is primarily intended for in driver stage of audio amplifiers. Features High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................