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HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC237, a member of the HBC237_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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HBC237 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBC237

Datasheet Details

Part number	HBC237
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	39.69 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBC237 Datasheet
Additional preview pages of the HBC237 datasheet.

HBC237 Product details

Description

The HBC237 is primarily intended for in driver stage of audio amplifiers.

Features

High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
Maximum Voltages and Currents (Ta=25°C) VCES Collector to Emitter Voltage 50 V VCEO Collector to Emitter Voltage.

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Published: Mar 23, 2005 |