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HBD139 - NPN POWER TRANSISTORS

Download the HBD139 datasheet PDF. This datasheet also covers the HBD139_Hi variant, as both devices belong to the same npn power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

PNP power transistor in a TO-126 plastic package.

Key Features

  • High Current (max. 1.5A).
  • Low Voltage (max. 80V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBD139_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD139
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.45 KB
Description NPN POWER TRANSISTORS
Datasheet download datasheet HBD139 Datasheet

Full PDF Text Transcription for HBD139 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HBD139. For precise diagrams, and layout, please refer to the original PDF.

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 HBD139 NPN POWER TRANSISTORS Descriptio...

View more extracted text
te : 2001.08.24 Page No. : 1/3 HBD139 NPN POWER TRANSISTORS Description PNP power transistor in a TO-126 plastic package. NPN complements: HBD140 Features • High Current (max. 1.5A) • Low Voltage (max. 80V) Applications Driver stages in hi-fi amplifiers and television circuits. Limiting Values Symbol Parametor Conditions Min. Max. Unit VCBO Collector-Base Voltage Open Emitter - 100 V VCEO Collector-Emitter Voltage Open Base - 80 V VEBO Emitter-Base Voltage Open Collector - 5 V IC Collector Current (DC) - 1.5 A ICM Peak Collector Current - 2 A IBM Peak Base Current - 1 A PD Total Dissipation at Ta=25°C Tc=25°C - 1.

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