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HBD139 - NPN POWER TRANSISTORS

This page provides the datasheet information for the HBD139, a member of the HBD139_Hi NPN POWER TRANSISTORS family.

Datasheet Summary

Description

PNP power transistor in a TO-126 plastic package.

Features

  • High Current (max. 1.5A).
  • Low Voltage (max. 80V).

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Datasheet preview – HBD139

Datasheet Details

Part number HBD139
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.45 KB
Description NPN POWER TRANSISTORS
Datasheet download datasheet HBD139 Datasheet
Additional preview pages of the HBD139 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 HBD139 NPN POWER TRANSISTORS Description PNP power transistor in a TO-126 plastic package. NPN complements: HBD140 Features • High Current (max. 1.5A) • Low Voltage (max. 80V) Applications Driver stages in hi-fi amplifiers and television circuits. Limiting Values Symbol Parametor Conditions Min. Max. Unit VCBO Collector-Base Voltage Open Emitter - 100 V VCEO Collector-Emitter Voltage Open Base - 80 V VEBO Emitter-Base Voltage Open Collector - 5 V IC Collector Current (DC) - 1.5 A ICM Peak Collector Current - 2 A IBM Peak Base Current - 1 A PD Total Dissipation at Ta=25°C Tc=25°C - 1.
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