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HBF422 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBF422 datasheet PDF. This datasheet also covers the HBF422_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Spec.

No.

: HE6404 Issued Date : 1993.03.18 Revised Date : 2002.04.18 Page No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipati

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Note: The manufacturer provides a single datasheet file (HBF422_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBF422
Manufacturer Hi-Sincerity Mocroelectronics
File Size 31.20 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBF422 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Spec. No. : HE6404 Issued Date : 1993.03.18 Revised Date : 2002.04.18 Page No. : 1/3 Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 830 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .......................................................
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