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HE8051S - NPN TRANSISTOR

Download the HE8051S datasheet PDF. This datasheet also covers the HE8051S_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HE8051S is designed for general purpose amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW Maximu

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Note: The manufacturer provides a single datasheet file (HE8051S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE8051S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.11 KB
Description NPN TRANSISTOR
Datasheet download datasheet HE8051S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................