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HE8550S - PNP TRANSISTOR

Download the HE8550S datasheet PDF. This datasheet also covers the HE8550S_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HE8550S is designed for general purpose amplifier applications.

Key Features

  • High DC Current gain: 100-500 at IC=150mA.
  • Complementary to HE8050S TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE8550S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE8550S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 54.48 KB
Description PNP TRANSISTOR
Datasheet download datasheet HE8550S Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HE8550 PNP TRANSISTOR
HE8551 PNP TRANSISTOR
HE8551S PNP TRANSISTOR
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HE8050S NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Page No. : 1/5 Description The HE8550S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-500 at IC=150mA • Complementary to HE8050S TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................