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HE8550S Datasheet PNP Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The HE8550S is designed for general purpose amplifier applications.

Key Features

  • High DC Current gain: 100-500 at IC=150mA.
  • Complementary to HE8050S TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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