HI117 Datasheet | Hi-Sincerity Mocroelectronics

Description The HI117 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (Ta=25°C) - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W - Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVCEO Collector to Emitter Voltage -100 V BVEBO Emitter to Base Voltage -5 V IC Collector Current (Continue) -4 A IC Collector Current (Peak) -6 A .. Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICBO ICEO IEBO - VCE(sat) - VBE(on) - h FE1 - h FE2 Cob Min. -100 -100 1 500 Typ. Max. -1 -2 -2 -2.5 -2.8 200 Unit V V m A m A m A V V K p F Test Conditions IC=-1m A IC=-30m A VCB=-100V VCE=-50V VEB=-5V IC=-2A, IB=-8m A IC=-2A, VCE=-4V IC=-1A, VCE=-4V IC=-2A, VCE=-4V VCB=-10V, f=0.1MHz - Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Darlington Schematic R1 R2 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 100000 Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 2/4 Saturation...